sales@szcinty.com
Produktübersicht
- Artikelnummer
- APTGTQ100DA65T1G
- Hersteller
- Microsemi / Microchip
- Produktkategorie
- IGBT-Module
- Beschreibung
- IGBT Modules CC8123
Dokumente & Medien
- Datenblätter
- APTGTQ100DA65T1G
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.65 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 100 A
- Gate-Emitter Leakage Current :
- 240 nA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP1
- Packaging :
- Tube
- Pd - Power Dissipation :
- 250 W
- Product :
- IGBT Silicon Modules
Beschreibung
IGBT Modules CC8123
Preis & Beschaffung
Zugehöriges Produkt
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