Produktübersicht
- Artikelnummer
- MSCGLQ50DDU120CTBL2NG
- Hersteller
- Microchip Technology
- Produktkategorie
- IGBT-Module
- Beschreibung
- IGBT Modules PM-IGBT-SBD-BL2
Dokumente & Medien
- Datenblätter
- MSCGLQ50DDU120CTBL2NG
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 1.2 kV
- Collector-Emitter Saturation Voltage :
- 2.4 V
- Configuration :
- Dual Common Source
- Continuous Collector Current at 25 C :
- 110 A
- Gate-Emitter Leakage Current :
- 150 nA
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Pd - Power Dissipation :
- 375 W
- Product :
- IGBT Silicon Modules
Beschreibung
IGBT Modules PM-IGBT-SBD-BL2
Preis & Beschaffung
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