sales@szcinty.com
Produktübersicht
- Artikelnummer
- APT60GT60JRD
- Hersteller
- Microsemi / Microchip
- Produktkategorie
- IGBT-Module
- Beschreibung
- IGBT Modules FG, IGBT-COMBI, 600V, 60A, SOT-227
Dokumente & Medien
- Datenblätter
- APT60GT60JRD
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 600 V
- Collector-Emitter Saturation Voltage :
- 2 V
- Configuration :
- Single
- Continuous Collector Current at 25 C :
- 93 A
- Gate-Emitter Leakage Current :
- 100 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- SOT-227-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 378 W
- Product :
- IGBT Silicon Modules
Beschreibung
IGBT Modules FG, IGBT-COMBI, 600V, 60A, SOT-227
Preis & Beschaffung
Zugehöriges Produkt
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