sales@szcinty.com
Produktübersicht
- Artikelnummer
- RN1706JE(TE85L,F)
- Hersteller
- Toshiba
- Produktkategorie
- Bipolartransistoren - Vorgespannt
- Beschreibung
- Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A
Dokumente & Medien
- Datenblätter
- RN1706JE(TE85L,F)
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Dual
- Continuous Collector Current :
- 100 mA
- DC Collector/Base Gain hfe Min :
- 80
- Maximum Operating Frequency :
- 250 MHz
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- ESV-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 100 mW
- Peak DC Collector Current :
- 100 mA
- Series :
- RN1706
- Transistor Polarity :
- NPN
- Typical Input Resistor :
- 4.7 kOhms
- Typical Resistor Ratio :
- 0.1
Beschreibung
Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 ESV, 50V, 100A
Preis & Beschaffung
Zugehöriges Produkt
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