Produktübersicht

Artikelnummer
RN1506(TE85L,F)
Hersteller
Toshiba
Produktkategorie
Bipolartransistoren - Vorgespannt
Beschreibung
Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SMV, 50V, 100A

Dokumente & Medien

Datenblätter
RN1506(TE85L,F)

Produkteigenschaften

Collector- Emitter Voltage VCEO Max :
50 V
Configuration :
Dual
Continuous Collector Current :
100 mA
DC Collector/Base Gain hfe Min :
80
Maximum Operating Frequency :
250 MHz
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SMV-5
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
300 mW
Peak DC Collector Current :
100 mA
Series :
RN1506
Transistor Polarity :
NPN
Typical Input Resistor :
4.7 kOhms
Typical Resistor Ratio :
0.1

Beschreibung

Bipolar Transistors - Pre-Biased Gen Trans NPN x 2 SMV, 50V, 100A

Preis & Beschaffung

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