Produktübersicht
- Artikelnummer
- RN1108MFV,L3F
- Hersteller
- Toshiba
- Produktkategorie
- Bipolartransistoren - Vorgespannt
- Beschreibung
- Bipolar Transistors - Pre-Biased TRANSISTOR
Dokumente & Medien
- Datenblätter
- RN1108MFV,L3F
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Configuration :
- Single
- DC Collector/Base Gain hfe Min :
- 80
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- VESM-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 mW
- Series :
- RN1108
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - Pre-Biased TRANSISTOR
Preis & Beschaffung
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