Produktübersicht

Artikelnummer
2N2857 TIN/LEAD
Hersteller
Central Semiconductor
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW

Dokumente & Medien

Datenblätter
2N2857 TIN/LEAD

Produkteigenschaften

Collector- Base Voltage VCBO :
30 V
Collector- Emitter Voltage VCEO Max :
15 V
Collector-Emitter Saturation Voltage :
-
Configuration :
Single
Emitter- Base Voltage VEBO :
2.5 V
Gain Bandwidth Product fT :
1.9 GHz
Maximum DC Collector Current :
-
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-72-4
Packaging :
Bulk
Pd - Power Dissipation :
200 mW
Series :
2N2857
Transistor Polarity :
NPN

Beschreibung

Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW

Preis & Beschaffung

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