Produktübersicht
- Artikelnummer
- 2N2857 TIN/LEAD
- Hersteller
- Central Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW
Dokumente & Medien
- Datenblätter
- 2N2857 TIN/LEAD
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 30 V
- Collector- Emitter Voltage VCEO Max :
- 15 V
- Collector-Emitter Saturation Voltage :
- -
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 2.5 V
- Gain Bandwidth Product fT :
- 1.9 GHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-72-4
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 200 mW
- Series :
- 2N2857
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW
Preis & Beschaffung
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