Produktübersicht
- Artikelnummer
- TSC5802DCH C5G
- Hersteller
- Taiwan Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans
Dokumente & Medien
- Datenblätter
- TSC5802DCH C5G
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 1050 V
- Collector- Emitter Voltage VCEO Max :
- 450 V
- Collector-Emitter Saturation Voltage :
- 0.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 15 V
- Maximum DC Collector Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-251-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 30 W
- Series :
- TSC5802DCH
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT TO-251 1050V 2.5A NPN Bplr Trans
Preis & Beschaffung
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