Produktübersicht

Artikelnummer
BCY79-IX TIN/LEAD
Hersteller
Central Semiconductor
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT PNP 45V 100mA 45Vceo 5.0Vebo 340mW

Dokumente & Medien

Datenblätter
BCY79-IX TIN/LEAD

Produkteigenschaften

Collector- Base Voltage VCBO :
45 V
Collector- Emitter Voltage VCEO Max :
45 V
Collector-Emitter Saturation Voltage :
0.25 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
200 mA
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-18-3
Packaging :
Bulk
Pd - Power Dissipation :
340 mW
Series :
BCY79
Transistor Polarity :
PNP

Beschreibung

Bipolar Transistors - BJT PNP 45V 100mA 45Vceo 5.0Vebo 340mW

Preis & Beschaffung

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