sales@szcinty.com
Produktübersicht
- Artikelnummer
- BC212B TIN/LEAD
- Hersteller
- Central Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT PNP Trans 50Vcbo 200 mA Ic 350 mW
Dokumente & Medien
- Datenblätter
- BC212B TIN/LEAD
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.25 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 200 MHz
- Maximum DC Collector Current :
- -
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 300 mW
- Series :
- BC212
- Transistor Polarity :
- PNP
Beschreibung
Bipolar Transistors - BJT PNP Trans 50Vcbo 200 mA Ic 350 mW
Preis & Beschaffung
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