Produktübersicht

Artikelnummer
2N5088 TIN/LEAD
Hersteller
Central Semiconductor
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 625mW

Dokumente & Medien

Datenblätter
2N5088 TIN/LEAD

Produkteigenschaften

Collector- Base Voltage VCBO :
35 V
Collector- Emitter Voltage VCEO Max :
30 V
Collector-Emitter Saturation Voltage :
0.5 V
Configuration :
Single
Emitter- Base Voltage VEBO :
4.5 V
Gain Bandwidth Product fT :
50 MHz
Maximum DC Collector Current :
-
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-92-3
Packaging :
Bulk
Pd - Power Dissipation :
625 mW
Series :
2N5088
Transistor Polarity :
NPN

Beschreibung

Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 625mW

Preis & Beschaffung

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