Produktübersicht

Artikelnummer
MPS8599 TIN/LEAD
Hersteller
Central Semiconductor
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 500mA 625mW

Dokumente & Medien

Datenblätter
MPS8599 TIN/LEAD

Produkteigenschaften

Collector- Base Voltage VCBO :
80 V
Collector- Emitter Voltage VCEO Max :
80 V
Collector-Emitter Saturation Voltage :
0.4 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
150 MHz
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-92-3
Packaging :
Bulk
Pd - Power Dissipation :
625 mW
Series :
MPS8599
Transistor Polarity :
PNP

Beschreibung

Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 500mA 625mW

Preis & Beschaffung

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