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Produktübersicht
- Artikelnummer
- 2N5401 TRA TIN/LEAD
- Hersteller
- Central Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
Dokumente & Medien
- Datenblätter
- 2N5401 TRA TIN/LEAD
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 160 V
- Collector- Emitter Voltage VCEO Max :
- 150 V
- Collector-Emitter Saturation Voltage :
- 0.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 300 MHz
- Maximum DC Collector Current :
- 600 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Reel
- Pd - Power Dissipation :
- 1.5 W
- Series :
- 2N5401
- Transistor Polarity :
- PNP
Beschreibung
Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW
Preis & Beschaffung
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