Produktübersicht
- Artikelnummer
- 2N3706 TRE TIN/LEAD
- Hersteller
- Central Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Dokumente & Medien
- Datenblätter
- 2N3706 TRE TIN/LEAD
Produkteigenschaften
- Packaging :
- Reel
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
GS8321Z18AGD-200V | GSI Technology | 3,000 | SRAM 1.8/2.5V 2M x 18 36M |
GS8321E18AGD-200V | GSI Technology | 3,000 | SRAM 1.8/2.5V 2M x 18 36M |
GS8321Z36AGD-200V | GSI Technology | 3,000 | SRAM 1.8/2.5V 1M x 36 36M |
GS8182D19BGD-435I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 1M x 18 18M |
GS832136AGD-150V | GSI Technology | 3,000 | SRAM 1.8/2.5V 1M x 36 36M |
GS832118AGD-150V | GSI Technology | 3,000 | SRAM 1.8/2.5V 2M x 18 36M |
GS8182S36BD-400I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 512K x 36 18M |
GS8182S08BGD-400I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 2M x 8 18M |
GS8182S09BGD-400I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 2M x 9 18M |
GS832132AGD-150V | GSI Technology | 3,000 | SRAM 1.8/2.5V 1M x 32 32M |
GS8182D08BGD-400I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 2M x 8 18M |
GS8321E32AGD-200V | GSI Technology | 3,000 | SRAM 1.8/2.5V 1M x 32 32M |
GS8182S09BD-400I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 2M x 9 18M |
GS8321E36AGD-150V | GSI Technology | 3,000 | SRAM 1.8/2.5V 1M x 36 36M |
GS8182D36BGD-400I | GSI Technology | 3,000 | SRAM 1.8 or 1.5V 512K x 36 18M |