Datenblätter

2N5551 TRA TIN/LEAD

Collector- Base Voltage VCBO :

180 V

Collector- Emitter Voltage VCEO Max :

160 V

Collector-Emitter Saturation Voltage :

0.2 V

Configuration :

Single

Emitter- Base Voltage VEBO :

6 V

Gain Bandwidth Product fT :

300 MHz

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

Through Hole

Package / Case :

TO-92-3

Packaging :

Reel

Pd - Power Dissipation :

1 W

Series :

2N5551

Transistor Polarity :

NPN