sales@szcinty.com
Produktübersicht
- Artikelnummer
- DXT651Q-13
- Hersteller
- Diodes Incorporated
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT Pwr Mid Perf Transistor
Dokumente & Medien
- Datenblätter
- DXT651Q-13
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 80 V
- Collector- Emitter Voltage VCEO Max :
- 60 V
- Collector-Emitter Saturation Voltage :
- 0.23 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 200 MHz
- Maximum DC Collector Current :
- 3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-89-3
- Packaging :
- Reel
- Pd - Power Dissipation :
- 2 W
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT Pwr Mid Perf Transistor
Preis & Beschaffung
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