Produktübersicht

Artikelnummer
2N6520TA
Hersteller
onsemi / Fairchild
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT PNP Si Transistor Epitaxial

Dokumente & Medien

Datenblätter
2N6520TA

Produkteigenschaften

Collector- Base Voltage VCBO :
- 350 V
Collector- Emitter Voltage VCEO Max :
- 350 V
Collector-Emitter Saturation Voltage :
- 1 V
Configuration :
Single
Emitter- Base Voltage VEBO :
- 5 V
Gain Bandwidth Product fT :
200 MHz
Maximum DC Collector Current :
0.5 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-92-3 Kinked Lead
Packaging :
Ammo Pack
Pd - Power Dissipation :
625 mW
Series :
2N6520
Transistor Polarity :
PNP

Beschreibung

Bipolar Transistors - BJT PNP Si Transistor Epitaxial

Preis & Beschaffung

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