sales@szcinty.com
Produktübersicht
- Artikelnummer
- 2SA1163-BL,LF
- Hersteller
- Toshiba
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Dokumente & Medien
- Datenblätter
- 2SA1163-BL,LF
Produkteigenschaften
- Collector- Base Voltage VCBO :
- - 120 V
- Collector- Emitter Voltage VCEO Max :
- - 120 V
- Collector-Emitter Saturation Voltage :
- - 300 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum Operating Temperature :
- + 125 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-236-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 mW
- Qualification :
- AEC-Q101
- Series :
- 2SA1163
- Transistor Polarity :
- PNP
Beschreibung
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Preis & Beschaffung
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