Produktübersicht

Artikelnummer
BC847BLT3G
Hersteller
onsemi
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT 100mA 50V NPN

Dokumente & Medien

Datenblätter
BC847BLT3G

Produkteigenschaften

Collector- Base Voltage VCBO :
50 V
Collector- Emitter Voltage VCEO Max :
45 V
Collector-Emitter Saturation Voltage :
0.6 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
100 MHz
Maximum DC Collector Current :
0.1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-23-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
225 mW
Series :
BC847BL
Transistor Polarity :
NPN

Beschreibung

Bipolar Transistors - BJT 100mA 50V NPN

Preis & Beschaffung

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