Produktübersicht

Artikelnummer
MMBT3906LT1HTSA1
Hersteller
Infineon Technologies
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A

Dokumente & Medien

Datenblätter
MMBT3906LT1HTSA1

Produkteigenschaften

Collector- Base Voltage VCBO :
40 V
Collector- Emitter Voltage VCEO Max :
40 V
Collector-Emitter Saturation Voltage :
0.4 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
250 MHz
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-23-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
330 mW
Series :
MMBT3906
Transistor Polarity :
PNP

Beschreibung

Bipolar Transistors - BJT AF TRANS GP BJT PNP 40V 0.2A

Preis & Beschaffung

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