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Produktübersicht
- Artikelnummer
- IMX17T108
- Hersteller
- ROHM Semiconductor
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT DUAL NPN/NPN
Dokumente & Medien
- Datenblätter
- IMX17T108
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.6 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 250 MHz
- Maximum DC Collector Current :
- 0.5 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SMT-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 mW
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT DUAL NPN/NPN
Preis & Beschaffung
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