Produktübersicht
- Artikelnummer
- HN1C01FE-Y,LF
- Hersteller
- Toshiba
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT Transistor for Small Signal Amp
Dokumente & Medien
- Datenblätter
- HN1C01FE-Y,LF
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 100 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- 150 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 100 mW
- Qualification :
- AEC-Q101
- Series :
- HN1C01
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT Transistor for Small Signal Amp
Preis & Beschaffung
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