sales@szcinty.com
Produktübersicht
- Artikelnummer
- HN2A01FU-Y(TE85L,F
- Hersteller
- Toshiba
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
Dokumente & Medien
- Datenblätter
- HN2A01FU-Y(TE85L,F
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 50 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.1 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- 150 mA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- US-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Series :
- HN2A01
- Transistor Polarity :
- PNP
Beschreibung
Bipolar Transistors - BJT Dual Trans PNP x 2 US6, -50V, -0.15A
Preis & Beschaffung
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