sales@szcinty.com
Produktübersicht
- Artikelnummer
- SBC856BDW1T1G
- Hersteller
- onsemi
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT SS SC-88 GP XSTR PNP 65V
Dokumente & Medien
- Datenblätter
- SBC856BDW1T1G
Produkteigenschaften
- Collector- Base Voltage VCBO :
- - 80 V
- Collector- Emitter Voltage VCEO Max :
- - 65 V
- Collector-Emitter Saturation Voltage :
- - 0.65 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 380 mW
- Qualification :
- AEC-Q101
- Series :
- BC856B
- Transistor Polarity :
- PNP
Beschreibung
Bipolar Transistors - BJT SS SC-88 GP XSTR PNP 65V
Preis & Beschaffung
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