Produktübersicht

Artikelnummer
FZT649
Hersteller
onsemi / Fairchild
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT NPN Transistor Low Saturation

Dokumente & Medien

Datenblätter
FZT649

Produkteigenschaften

Collector- Base Voltage VCBO :
35 V
Collector- Emitter Voltage VCEO Max :
25 V
Collector-Emitter Saturation Voltage :
600 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
150 MHz
Maximum DC Collector Current :
3 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-223-4
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
2 W
Series :
FZT649
Transistor Polarity :
NPN

Beschreibung

Bipolar Transistors - BJT NPN Transistor Low Saturation

Preis & Beschaffung

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