Datenblätter

MJD32CT4G

Collector- Base Voltage VCBO :

100 V

Collector- Emitter Voltage VCEO Max :

100 V

Collector-Emitter Saturation Voltage :

1.2 V

Configuration :

Single

Emitter- Base Voltage VEBO :

5 V

Gain Bandwidth Product fT :

3 MHz

Maximum DC Collector Current :

3 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

SMD/SMT

Package / Case :

TO-252-3

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

1.56 W

Series :

MJD32C

Transistor Polarity :

PNP