Datenblätter

PZT651T1G

Collector- Base Voltage VCBO :

80 V

Collector- Emitter Voltage VCEO Max :

60 V

Collector-Emitter Saturation Voltage :

0.5 V

Configuration :

Single

Emitter- Base Voltage VEBO :

5 V

Gain Bandwidth Product fT :

75 MHz

Maximum DC Collector Current :

2 A

Maximum Operating Temperature :

+ 150 C

Minimum Operating Temperature :

- 65 C

Mounting Style :

SMD/SMT

Package / Case :

SOT-223-4

Packaging :

Cut Tape, MouseReel, Reel

Pd - Power Dissipation :

800 MW

Series :

PZT651

Transistor Polarity :

NPN