sales@szcinty.com
Produktübersicht
- Artikelnummer
- 2DD1664Q-13
- Hersteller
- Diodes Incorporated
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT 1000W 32Vceo
Dokumente & Medien
- Datenblätter
- 2DD1664Q-13
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 40 V
- Collector- Emitter Voltage VCEO Max :
- 32 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 280 MHz
- Maximum DC Collector Current :
- 1 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-89-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1000 mW
- Qualification :
- AEC-Q101
- Series :
- 2DD16
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT 1000W 32Vceo
Preis & Beschaffung
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