sales@szcinty.com
Produktübersicht
- Artikelnummer
- PHE13003C,412
- Hersteller
- WeEn Semiconductors
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT Silicon diffused power transistor
Dokumente & Medien
- Datenblätter
- PHE13003C,412
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 700 V
- Collector- Emitter Voltage VCEO Max :
- 400 V
- Collector-Emitter Saturation Voltage :
- 1.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 9 V
- Maximum DC Collector Current :
- 1.5 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Pd - Power Dissipation :
- 2.1 W
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT Silicon diffused power transistor
Preis & Beschaffung
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