Produktübersicht

Artikelnummer
BSS4130AHZGT116
Hersteller
ROHM Semiconductor
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT TRANSISTOR FOR LOW FREQ AMP

Dokumente & Medien

Datenblätter
BSS4130AHZGT116

Produkteigenschaften

Collector- Base Voltage VCBO :
30 V
Collector- Emitter Voltage VCEO Max :
30 V
Collector-Emitter Saturation Voltage :
90 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
400 MHz
Maximum DC Collector Current :
2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-23-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
200 mW
Qualification :
AEC-Q101
Transistor Polarity :
NPN

Beschreibung

Bipolar Transistors - BJT TRANSISTOR FOR LOW FREQ AMP

Preis & Beschaffung

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