Produktübersicht

Artikelnummer
2N2905Ae3
Hersteller
Microchip Technology
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT BJTs

Dokumente & Medien

Datenblätter
2N2905Ae3

Produkteigenschaften

Collector- Base Voltage VCBO :
60 V
Collector- Emitter Voltage VCEO Max :
60 V
Collector-Emitter Saturation Voltage :
1.6 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
-
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-39-3
Pd - Power Dissipation :
0.8 W
Transistor Polarity :
PNP

Beschreibung

Bipolar Transistors - BJT BJTs

Preis & Beschaffung

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