sales@szcinty.com
Produktübersicht
- Artikelnummer
- DXTN3C100PSQ-13
- Hersteller
- Diodes Incorporated
- Produktkategorie
- Bipolartransistoren - BJT
- Beschreibung
- Bipolar Transistors - BJT 100V NPN Medium Pwr Low Sat Transistor
Dokumente & Medien
- Datenblätter
- DXTN3C100PSQ-13
Produkteigenschaften
- Collector- Base Voltage VCBO :
- 100 V
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 225 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 7 V
- Gain Bandwidth Product fT :
- 140 MHz
- Maximum DC Collector Current :
- 3 A
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- PowerDI5060-8
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 5 W
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
Beschreibung
Bipolar Transistors - BJT 100V NPN Medium Pwr Low Sat Transistor
Preis & Beschaffung
Zugehöriges Produkt
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