Produktübersicht

Artikelnummer
DXTP3C100PSQ-13
Hersteller
Diodes Incorporated
Produktkategorie
Bipolartransistoren - BJT
Beschreibung
Bipolar Transistors - BJT 100V PNP High Pwr Low Sat Transistor

Dokumente & Medien

Datenblätter
DXTP3C100PSQ-13

Produkteigenschaften

Collector- Base Voltage VCBO :
- 100 V
Collector- Emitter Voltage VCEO Max :
- 100 V
Collector-Emitter Saturation Voltage :
- 360 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
- 7 V
Gain Bandwidth Product fT :
125 MHz
Maximum DC Collector Current :
- 3 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
PowerDI5060-8
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
5 W
Qualification :
AEC-Q101
Transistor Polarity :
PNP

Beschreibung

Bipolar Transistors - BJT 100V PNP High Pwr Low Sat Transistor

Preis & Beschaffung

Zugehöriges Produkt

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

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