sales@szcinty.com
Produktübersicht
- Artikelnummer
- PFC-W1206LF-03-5111-D
- Hersteller
- IRC / TT Electronics
- Produktkategorie
- Dünnschichtwiderstände - SMD
- Beschreibung
- Thin Film Resistors - SMD 1206 5K11 Ohms 0.5% 25 PPM
Dokumente & Medien
- Datenblätter
- PFC-W1206LF-03-5111-D
Produkteigenschaften
- Case Code - in :
- 1206
- Case Code - mm :
- 3216
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Packaging :
- Reel
- Power Rating :
- 330 mW (1/3 W)
- Resistance :
- 5.11 kOhms
- Series :
- PFC
- Temperature Coefficient :
- 25 PPM / C
- Tolerance :
- 0.5 %
- Voltage Rating :
- 200 V
Beschreibung
Thin Film Resistors - SMD 1206 5K11 Ohms 0.5% 25 PPM
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
| Teil | Hersteller | Lager | Beschreibung |
|---|---|---|---|
| DMT10H009SCG-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 61V 100V V-DFN3333-8 T&R 3K |
| SIHG22N60EL-GE3 | Vishay / Siliconix | 3,000 | MOSFET 600V Vds 30V Vgs TO-247AC |
| DMT32M5LPSW-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 25V~30V PowerDI5060-8 T&R 2.5K |
| DMPH3010LPSQ-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 25V 30V PowerDI5060-8 T&R 2.5K |
| DMT32M4LFG-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS: 25V 30V PowerDI3333-8 T&R 3K |
| DMTH10H009SPSQ-13 | Diodes Incorporated | 12,500 | MOSFET MOSFET BVDSS: 61V 100V PowerDI5060-8 T&R 2.5K |
| DMT8012LFG-13 | Diodes Incorporated | 3,000 | MOSFET 80V N-Ch Enh FET 20Vgs 9.5A 1949pF |
| TK40S10K3Z(T6L1,NQ | Toshiba | 3,000 | MOSFET N-Ch MOS 40A 100V 93W 3110pF 61nC |
| DMNH15H110SPS-13 | Diodes Incorporated | 7,500 | MOSFET MOSFET BVDSS: 101V 250V PowerDI5060-8 T&R 2.5K |
| DMT32M4LPSW-13 | Diodes Incorporated | 7,500 | MOSFET MOSFET BVDSS: 25V 30V PowerDI5060-8 T&R 2.5K |
| PJP12NA60_T0_00001 | PANJIT | 3,000 | MOSFET PJ/P12NA60/TP//HF/0.05K/TO-220AB/MOS/TO/NFET-600CTMN//PJ/TO220AB-AS17/TO220AB-AS18/TO220AB-AS41 |
| STP22N60M6 | STMicroelectronics | 3,000 | MOSFET PTD HIGH VOLTAGE |
| SQR100N04-3M8R_GE3 | Vishay / Siliconix | 3,000 | MOSFET 40V Vds 20V Vgs |
| SI2601DN-T1-GE3 | Vishay / Siliconix | 3,000 | MOSFET 20V 19mohm @ 4.5V |
| DMP2123LQ-13 | Diodes Incorporated | 3,000 | MOSFET MOSFET BVDSS |
