Produktübersicht
- Artikelnummer
- MRF1K50GNR5
- Hersteller
- NXP Semiconductors
- Produktkategorie
- HF-MOSFET-Transistoren
- Beschreibung
- RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Dokumente & Medien
- Datenblätter
- MRF1K50GNR5
Produkteigenschaften
- Gain :
- 23 dB
- Id - Continuous Drain Current :
- 36 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1.8 MHz to 500 MHz
- Output Power :
- 1.5 kW
- Package / Case :
- OM-1230G-4L
- Packaging :
- Reel
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 133 V
Beschreibung
RF MOSFET Transistors Wideband RF Power LDMOS Transistors, 1.8-500 MHz, 1500 W CW, 50 V
Preis & Beschaffung
Zugehöriges Produkt
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