Datenblätter

QPD1006

Gain :

17.8 dB

Id - Continuous Drain Current :

14 A

Maximum Drain Gate Voltage :

145 V

Maximum Operating Temperature :

+ 85 C

Minimum Operating Temperature :

- 40 C

Mounting Style :

SMD/SMT

Operating Frequency :

1.2 GHz to 1.4 GHz

Output Power :

450 W

Package / Case :

NI-50CW

Pd - Power Dissipation :

445 W

Technology :

GaN-on-SiC

Transistor Polarity :

N-Channel

Transistor Type :

HEMT