Produktübersicht

Artikelnummer
GTVA126001EC-V1-R0
Hersteller
Wolfspeed / Cree
Produktkategorie
HF-JFET-Transistoren
Beschreibung
RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 600W

Dokumente & Medien

Datenblätter
GTVA126001EC-V1-R0

Produkteigenschaften

Gain :
18 dB
Id - Continuous Drain Current :
10 A
Maximum Drain Gate Voltage :
-
Mounting Style :
Screw Mount
Operating Frequency :
1.2 GHz to 1.4 GHz
Output Power :
600 W
Package / Case :
H-36248-2
Packaging :
Cut Tape, MouseReel, Reel
Technology :
GaN-on-SiC
Transistor Polarity :
N-Channel
Transistor Type :
HEMT
Vds - Drain-Source Breakdown Voltage :
150 V
Vgs - Gate-Source Breakdown Voltage :
- 10 V to 2 V

Beschreibung

RF JFET Transistors GaN HEMT 50V 1.2-1.4GHz 600W

Preis & Beschaffung

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