Produktübersicht
- Artikelnummer
- BF 888 H6327
- Hersteller
- Infineon Technologies
- Produktkategorie
- HF-Bipolartransistoren
- Beschreibung
- RF Bipolar Transistors RF BIP TRANSISTOR
Dokumente & Medien
- Datenblätter
- BF 888 H6327
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 4 V
- Configuration :
- Single
- Continuous Collector Current :
- 30 mA
- DC Collector/Base Gain hfe Min :
- 250
- Emitter- Base Voltage VEBO :
- 13 V
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-343
- Packaging :
- Cut Tape, MouseReel, Reel
- Series :
- BF888
- Technology :
- SI
- Transistor Polarity :
- NPN
- Transistor Type :
- Bipolar Power
Beschreibung
RF Bipolar Transistors RF BIP TRANSISTOR
Preis & Beschaffung
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