Produktübersicht
- Artikelnummer
- BLV25
- Hersteller
- Advanced Semiconductor, Inc.
- Produktkategorie
- HF-Bipolartransistoren
- Beschreibung
- RF Bipolar Transistors RF Transistor
Dokumente & Medien
- Datenblätter
- BLV25
Produkteigenschaften
- Collector- Emitter Voltage VCEO Max :
- 33 V
- Continuous Collector Current :
- 17.5 A
- DC Collector/Base Gain hfe Min :
- 15
- Emitter- Base Voltage VEBO :
- 4 V
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Screw Mount
- Operating Frequency :
- 108 MHz
- Package / Case :
- 316-01
- Packaging :
- Tray
- Technology :
- SI
- Transistor Polarity :
- NPN
- Transistor Type :
- Bipolar Power
Beschreibung
RF Bipolar Transistors RF Transistor
Preis & Beschaffung
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