Produktübersicht
- Artikelnummer
- SMBJ7.0CA R4G
- Hersteller
- Taiwan Semiconductor
- Produktkategorie
- ESD-Unterdrücker / TVS-Dioden
- Beschreibung
- ESD Suppressors / TVS Diodes 600W, 8.2V, 5%, Bidirectional, TVS
Dokumente & Medien
- Datenblätter
- SMBJ7.0CA R4G
Produkteigenschaften
- Breakdown Voltage :
- 7.78 V
- Clamping Voltage :
- 12 V
- Ipp - Peak Pulse Current :
- 52 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Number of Channels :
- 1 Channel
- Package / Case :
- DO-214AA-2
- Packaging :
- Reel
- Polarity :
- Bidirectional
- Pppm - Peak Pulse Power Dissipation :
- 600 W
- Product Type :
- TVS Diodes
- Series :
- SMBJxx
- Termination Style :
- SMD/SMT
- Vesd - Voltage ESD Air Gap :
- -
- Vesd - Voltage ESD Contact :
- -
- Working Voltage :
- 7 V
Beschreibung
ESD Suppressors / TVS Diodes 600W, 8.2V, 5%, Bidirectional, TVS
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
RJE0607JSP-00#J0 | Renesas Electronics | 3,000 | MOSFET Power MOSFET |
SI4736DY-T1-E3 | Vishay / Siliconix | 3,000 | MOSFET 30V 13A 1.4W |
SIR450DP-T1-RE3 | Vishay / Siliconix | 3,000 | MOSFET N-CHANNEL 45-V (D-S) |
FDMS8095AC | onsemi / Fairchild | 3,000 | MOSFET PT5 150V Dual N & P-Channel Power |
SI7973DP-T1-E3 | Vishay / Siliconix | 3,000 | MOSFET 12V 12.8A 1.4W |
STL28N60M2 | STMicroelectronics | 3,000 | MOSFET PTD HIGH VOLTAGE |
NTMJS0D9N04CTWG | onsemi | 3,000 | MOSFET T6 40V SL LFPAK |
SI7962DP-T1-E3 | Vishay / Siliconix | 3,000 | MOSFET DUAL N-CH 40V (D-S) HIGH THRESHOLD |
SIE850DF-T1-GE3 | Vishay / Siliconix | 3,000 | MOSFET 30V 164A 104W 2.5mohm @ 10V |
NTMFS4H013NFT3G | onsemi | 3,000 | MOSFET FETKY SO8FL 25V 35A |
DN2625DK6-G M932 | Microchip Technology | 3,000 | MOSFET N-Channel MOSFET 250V 8-Pin |
SIDR622DP-T1-RE3 | Vishay / Siliconix | 3,000 | MOSFET N-CHANNEL 150-V (D-S) MOSFET |
PSMN5R0-100PS,127 | Nexperia | 3,000 | MOSFET N-Ch 100V 5 mOhms |
IRF150DM115XTMA1 | Infineon Technologies | 3,000 | MOSFET TRENCH >=100V |
SIHH28N60E-T1-GE3 | Vishay Semiconductors | 3,000 | MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8 |