sales@szcinty.com
Produktübersicht
- Artikelnummer
- 1N5361Ae3/TR8
- Hersteller
- Microchip Technology
- Produktkategorie
- Zener-Dioden
- Beschreibung
- Zener Diodes Zener Diodes
Dokumente & Medien
- Datenblätter
- 1N5361Ae3/TR8
Produkteigenschaften
- Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- T-18-2
- Packaging :
- Reel
- Pd - Power Dissipation :
- 5 W
- Test Current :
- 56 mA
- Voltage Temperature Coefficient :
- -
- Voltage Tolerance :
- 10 %
- Vz - Zener Voltage :
- 27 V
- Zener Current :
- 0.5 uA
- Zz - Zener Impedance :
- 11 Ohms
Beschreibung
Zener Diodes Zener Diodes
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
| Teil | Hersteller | Lager | Beschreibung |
|---|---|---|---|
| GS84018CGB-200 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 18 4M |
| GS84018CGT-200I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 18 4M |
| 71V3578S150PFG | Renesas / IDT | 3,000 | SRAM 256Kx18 SYNC 3.3V FLOW-THROUGH SRAM |
| 71V3579S85PFG | Renesas / IDT | 3,000 | SRAM 256Kx18 SYNC 3.3V FLOW-THROUGH SRAM |
| GS84018CGB-150I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 18 4M |
| GS84032CB-150I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 32 4M |
| GS84036CGB-150I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 36 4M |
| GS84032CB-166I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 32 4M |
| GS84018CB-150I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 18 4M |
| GS84032CGB-150I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 32 4M |
| GS84036CB-150I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 36 4M |
| GS84036CB-166I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 36 4M |
| GS84018CB-166I | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 256K x 18 4M |
| 71V3576S133PFGI | Renesas / IDT | 3,000 | SRAM 4M 3.3V I/O PBSRAM SLOW X |
| GS84032CB-250 | GSI Technology | 3,000 | SRAM 2.5 or 3.3V 128K x 32 4M |
