Produktübersicht
- Artikelnummer
- RW70U21R5FB12
- Hersteller
- Vishay / Dale
- Produktkategorie
- Drahtwiderstände
- Beschreibung
- Wirewound Resistors - Through Hole 1watt 21.5ohms 1%
Dokumente & Medien
- Datenblätter
- RW70U21R5FB12
Produkteigenschaften
- Length :
- 10.3 mm
- Maximum Operating Temperature :
- + 250 C
- Minimum Operating Temperature :
- - 65 C
- Power Rating :
- 1 W
- Resistance :
- 21.5 Ohms
- Series :
- RW Military
- Temperature Coefficient :
- 20 PPM / C
- Termination Style :
- Axial
- Tolerance :
- 1 %
- Width :
- 2.4 mm
Beschreibung
Wirewound Resistors - Through Hole 1watt 21.5ohms 1%
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
IS42S32400F-7TL | ISSI | 756 | DRAM 128M, 3.3V, SDRAM, 4Mx32, 143Mhz, 86 pin TSOP II (400 mil) RoHS |
IS42S16160J-6TL | ISSI | 5,508 | DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz |
IS42S16160J-6BL | ISSI | 1,392 | DRAM 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) RoHS |
AS4C16M16SA-6TCN | Alliance Memory | 1,506 | DRAM |
IS42S16160G-7TL | ISSI | 1,518 | DRAM 256M 16Mx16 143MHz SDR SDRAM, 3.3V |
IS42S16160J-6TLI | ISSI | 2,596 | DRAM 256M, 3.3V, SDRAM 16Mx16, 166MHz |
IS42S32400F-6BL | ISSI | 1,298 | DRAM 128M 4Mx32 166Mhz SDR SDRAM, 3.3V |
IS42S16160G-6BLI | ISSI | 1,192 | DRAM 256M 16Mx16 166Mhz SDR SDRAM, 3.3V |
IS43TR16640C-125JBLI | ISSI | 760 | DRAM 1G, 1.5V, DDR3, 64Mx16, 1600MT/s @ 10-10-10, 96 ball BGA (9mm x13mm) RoHS, IT |
IS42S32400F-7TLI | ISSI | 314 | DRAM 128M 4Mx32 143Mhz SDR SDRAM, 3.3V |
IS45S32400F-7TLA2 | ISSI | 1,824 | DRAM 128Mb, 3.3V, 143MHz 4Mx32 SDR SDRAM |
AS4C16M16SA-6BIN | Alliance Memory | 2,405 | DRAM 256Mb, 3.3V, 166Mhz 16M x 16 SDRAM |
IS66WVC4M16EALL-7010BLI | ISSI | 1,533 | DRAM Pseudo SRAM 64Mb |
IS42S32400F-7BLI | ISSI | 1,700 | DRAM 128M 4Mx32 143Mhz SDR SDRAM, 3.3V |
AS4C4M32SA-6TIN | Alliance Memory | 968 | DRAM SDRAM,128M,3.3V 166Mhz,4M x 32 |