Produktübersicht
- Artikelnummer
- CFR25J68R
- Hersteller
- TE Connectivity / Holsworthy
- Produktkategorie
- Kohleschichtwiderstände
- Beschreibung
- Carbon Film Resistors - Through Hole 68Ohm 1/3W 1200PPM
Dokumente & Medien
- Datenblätter
- CFR25J68R
Produkteigenschaften
- Diameter :
- 2.5 mm
- Length :
- 6.8 mm
- Maximum Operating Temperature :
- + 155 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Bulk
- Power Rating :
- 330 mW (1/3 W)
- Resistance :
- 68 Ohms
- Series :
- CFR
- Temperature Coefficient :
- - 1200 PPM / C, 0 PPM / C
- Termination Style :
- Axial
- Tolerance :
- 5 %
Beschreibung
Carbon Film Resistors - Through Hole 68Ohm 1/3W 1200PPM
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
MT62F512M32D2DR-031 WT ES:B | Micron | 3,000 | DRAM LPDDR5 16G 512MX32 FBGA DDP |
MT40A1G8SA-062E IT:R | Micron | 3,000 | DRAM DDR4 8G X8 TFBGA |
W9825G2JB-6I TR | Winbond | 3,000 | DRAM 256Mb SDR SDRAM x32, 166MHz, Ind Temp T&R |
MT53E128M32D2DS-046 AAT:A TR | Micron | 3,000 | DRAM LPDDR4 4G 128MX32 FBGA AAT DDP |
MT53E128M32D2DS-053 AAT:A TR | Micron | 3,000 | DRAM LPDDR4 4G 128MX32 WFBGA |
MT53E128M32D2FW-046 AAT:A TR | Micron | 3,000 | DRAM LPDDR4 4G 128MX32 FBGA DDP |
MT46H64M32LFBQ-48 AIT:C | Micron | 3,000 | DRAM MOBILE DDR 2G 64MX32 FBGA |
S70KL1283DPBHA023 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
S70KL1282DPBHA023 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
MT40A512M8SA-062E AIT:F | Micron | 3,000 | DRAM DDR4 4G 512MX8 FBGA |
S70KL1283DPBHI020 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
S70KL1282DPBHB033 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
S70KL1283DPBHB023 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
S70KL1282DPBHB023 | Cypress Semiconductor | 3,000 | DRAM HyperRAM |
MT42L16M32D1HE-18 AAT:E TR | Micron | 3,000 | DRAM DRAM LPDDR2 U07M 512Mb |