Produktübersicht
- Artikelnummer
- 8058-1G30
- Hersteller
- TE Connectivity / AMP Connectors
- Produktkategorie
- IC- und Komponentensockel
- Beschreibung
- IC & Component Sockets TO5 SOCKET 200P
Dokumente & Medien
- Datenblätter
- 8058-1G30
Produkteigenschaften
- Contact Plating :
- Gold
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Number of Positions :
- 8 Position
- Product :
- Transistor Sockets
Beschreibung
IC & Component Sockets TO5 SOCKET 200P
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
CGHV31500F | Wolfspeed / Cree | 3,000 | RF JFET Transistors 500W, GaN HEMT, 50V, 2.7-3.1GHz, Flange |
NPT1012B | MACOM | 3,000 | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN |
CMPA901A020S | Wolfspeed / Cree | 3,000 | RF JFET Transistors 20W, GaN MMIC Power Amplifier, 28V, 9.0-10.0GHz, QFN, 6x6mm |
CMPA2735015S | Wolfspeed / Cree | 3,000 | RF JFET Transistors 25W, GaN MMIC Power Amplifier, 28V, 2.5-6.0GHz, Flange |
NPT1010B | MACOM | 3,000 | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN |
CGB5P-CEN | Wolfspeed / Cree | 3,000 | RF JFET Transistors Gate Biasing Assembly, GaN, 5-Pins, Center Pin Gate Control |
NPT1015B | MACOM | 3,000 | RF JFET Transistors |
NPT1004D | MACOM | 3,000 | RF JFET Transistors Transistor, 45W, DC-4.0 GHz |
CMPA2738060F | Wolfspeed / Cree | 3,000 | RF JFET Transistors 60W, GaN MMIC Power Amplifier, 50V, 2.7-3.8GHz, Flange |
A3G26D055N-2400 | NXP Semiconductors | 3,000 | RF JFET Transistors A3G26D055N-2400 |
A3G26D055N-2600 | NXP Semiconductors | 3,000 | RF JFET Transistors A3G26D055N-2600 |
CGB9P-CEN | Wolfspeed / Cree | 3,000 | RF JFET Transistors Gate Biasing Assembly, GaN, 9-Pins, Center Pin Gate Control |
TGF2023-2-05 | Qorvo | 3,000 | RF JFET Transistors DC-18GHZ 25W TQGaN25 PAE 78.3% Gain 18dB |
CGB9P-SIDE | Wolfspeed / Cree | 3,000 | RF JFET Transistors Gate Biasing Assembly, GaN, 9-Pins, Side Pins Gate Control |
TGF2978-SM | Qorvo | 3,000 | RF JFET Transistors 8-12GHz 20W GaN PAE 50% Gain 11dB |