Produktübersicht

Artikelnummer
RF18N180F251CT
Hersteller
Walsin
Produktkategorie
Mehrschichtige Keramikkondensatoren MLCC - SMD/SMT
Beschreibung
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 18 pF +/- 1% 250 V T&R RF

Dokumente & Medien

Datenblätter
RF18N180F251CT

Produkteigenschaften

Capacitance :
18 pF
Case Code - in :
0603
Case Code - mm :
1608
Dielectric :
C0G (NP0)
Height :
0.8 mm
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 55 C
Packaging :
Reel
Product :
RF Microwave / High Q
Series :
RF
Termination :
Standard
Termination Style :
SMD/SMT
Tolerance :
1 %
Voltage Rating DC :
250 VDC

Beschreibung

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 MLCC NPO 18 pF +/- 1% 250 V T&R RF

Preis & Beschaffung

Zugehöriges Produkt

  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6VQG100C
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C256-6TQG144C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 36-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C32A-6VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44C
  • Xilinx
    CPLD - Complex Programmable Logic Devices 3.3V 72-mc CPLD
  • Xilinx
    CPLD - Complex Programmable Logic Devices XC2C64A-7VQG44I
  • STMicroelectronics
    Microprocessors - MPU MPU ARM926 Cortex 8-ch DMA 32KB Rom
  • STMicroelectronics
    Embedded - CPLDs (Complex Programmable Logic Devices)

Das könnte Sie auch interessieren

Teil Hersteller Lager Beschreibung
IS61LPS51218B-200TQLI-TR ISSI 3,000 SRAM 8Mb,Pipeline,Sync,512K x 18,200Mhz,3.3v I/O,100 Pin TQFP, 3CE, RoHS
IS61LF51218B-7.5TQLI-TR ISSI 3,000 SRAM 8Mb,Flow-Through,Sync,512K x 18,7.5ns,3.3v I/O,100 Pin TQFP, 3CE, RoHS
AS6C4008A-55BINTR Alliance Memory 3,000 SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
IS64WV6416EEBLL-10BLA3-TR ISSI 3,000 SRAM 1Mb,High-Speed/Low Power,Async,64K x 16,10ns,2.4v-3.6v,48 Ball mBGA (6x8mm), RoHS, Automotive temp
IS66WVC2M16ECLL-7010BLI-TR ISSI 3,000 SRAM 32Mb,Pseudo SRAM,Asynch/Page/Burst CRAM 1.5, 2M x 16,70ns,1.7v~1.95v,54 Ball BGA (6x8 mm), RoHS
IS66WVE2M16EALL-70BLI-TR ISSI 3,000 SRAM 32Mb,Pseudo SRAM,Asynch/Page, 2M x 16,70ns,VDD 1.7V~1.95V, VDDQ 1.7V~1.95V,48 Ball BGA (6x8 mm), RoHS
AS6C8016-55TINTR Alliance Memory 3,000 SRAM 8M L-Power, 2.7-3.6V 512k x 16, 48pin
IS61WV20488FBLL-10TLI-TR ISSI 3,000 SRAM 16Mb,High-Speed,Async,2Mbx8,10ns, 2.4v-3.6v, 44 Pin TSOP II, RoHS
IS62WV25616ECLL-35BLI-TR ISSI 3,000 SRAM 4Mb, Low Power/Power Saver,Async,256K x 16,35ns, 3.3v +/-5%,48 Ball mBGA (6x8 mm), RoHS
IS64WV6416BLL-15BLA3-TR ISSI 3,000 SRAM 1Mb,High-Speed/Low Power,Async,64K x 16,12ns/3.3v or 15ns/2.5v-3.6v,48 Ball mBGA (6x8 mm), RoHS, Automotive temp
AS6C1608-55BINTR Alliance Memory 3,000 SRAM 16M 3V 55ns 2048Kx8 LP Asyn SRAM
IS61VVF409618B-7.5TQL ISSI 3,000 SRAM 72Mb,Flowthrough,Sync,4Mb x 18,1.8V I/O,100 Pin TQFP, RoHS
IS62C51216AL-55TLI-TR ISSI 3,000 SRAM 8Mb, Low Power Async, 512Kx16, 5v,44 Pin TSOP II, RoHS
IS62C10248AL-55TLI-TR ISSI 3,000 SRAM 8Mb, Low Power Async, 1Mbx8 5v,44 Pin TSOP II, RoHS
IS61WV51216EDBLL-8TLI-TR ISSI 3,000 SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,8ns,2.4V-3.6V,44 Pin TSOP II, RoHS