sales@szcinty.com
Produktübersicht
- Artikelnummer
- GCM31A5C2J122JX01D
- Hersteller
- Murata Electronics
- Produktkategorie
- Mehrschichtige Keramikkondensatoren MLCC - SMD/SMT
- Beschreibung
- Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1200pF 630volts C0G 5%
Dokumente & Medien
- Datenblätter
- GCM31A5C2J122JX01D
Produkteigenschaften
- Capacitance :
- 1200 pF
- Case Code - in :
- 1206
- Case Code - mm :
- 3216
- Dielectric :
- C0G (NP0)
- Height :
- 1 mm
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 55 C
- Packaging :
- Cut Tape, MouseReel, Reel
- Product :
- Automotive MLCCs
- Qualification :
- AEC-Q200
- Series :
- GCM
- Termination :
- Standard
- Termination Style :
- SMD/SMT
- Tolerance :
- 5 %
- Voltage Rating DC :
- 630 VDC
Beschreibung
Multilayer Ceramic Capacitors MLCC - SMD/SMT 1206 1200pF 630volts C0G 5%
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
| Teil | Hersteller | Lager | Beschreibung |
|---|---|---|---|
| RF2L36075CF2 | STMicroelectronics | 30 | RF MOSFET Transistors 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor |
| RF3L05150CB4 | STMicroelectronics | 2 | RF MOSFET Transistors 150 W, 28/32 V RF power LDMOS transistor from HF to 1 GHz |
| A3G26D055NT4 | NXP Semiconductors | 21 | RF MOSFET Transistors Airfast RF Power GaN Transistor, 100-2690 MHz, 8 W Avg., 48 V |
| A3T23H450W23SR6 | NXP Semiconductors | 123 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 87 W Avg., 30 V |
| MRF300BN | NXP Semiconductors | 519 | RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V |
| MHT1803B | NXP Semiconductors | 141 | RF MOSFET Transistors 300W 200MHZ TO-247-3L |
| MHT1803A | NXP Semiconductors | 249 | RF MOSFET Transistors RF Power LDMOS Transistor for Consumer and Commercial Cooking, 1.8-50 MHz, 300 W CW, 50 V |
| A3T23H300W23SR6 | NXP Semiconductors | 115 | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 63 W Avg., 30 V |
| MRFX600HSR5 | NXP Semiconductors | 38 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V |
| MRFX600GSR5 | NXP Semiconductors | 50 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V |
| MRF300AN | NXP Semiconductors | 222 | RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V |
| MRFX1K80NR5 | NXP Semiconductors | 71 | RF MOSFET Transistors 65V LDMOS 1800W CW 1.8-400MHz |
| MRF13750HR5 | NXP Semiconductors | 46 | RF MOSFET Transistors RF Power LDMOS Transistor 750 W |
| MRFX600HR5 | NXP Semiconductors | 35 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V |
| MRFX035HR5 | NXP Semiconductors | 56 | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 35 W CW over 1.8-512 MHz, 65 V |
