Produktübersicht
- Artikelnummer
- VDD1G66B-00000-000
- Hersteller
- Carling Technologies
- Produktkategorie
- Schaltaktoren
- Beschreibung
- Switch Actuators
Dokumente & Medien
- Datenblätter
- VDD1G66B-00000-000
Beschreibung
Switch Actuators
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
TJ40S04M3L,LXHQ | Toshiba | 11,991 | MOSFET 68W 1MHz Automotive; AEC-Q101 |
IPD80R2K7C3AATMA1 | Infineon Technologies | 3,000 | MOSFET AUTOMOTIVE |
BSZ0500NSIATMA1 | Infineon Technologies | 5,000 | MOSFET TRENCH <= 40V |
STP18NM60N | STMicroelectronics | 2,000 | MOSFET N-channel 600 V 0.27 ohm 13A MDmesh |
SPD07N60C3ATMA1 | Infineon Technologies | 7,212 | MOSFET LOW POWER_LEGACY |
TPHR7904PB,L1XHQ | Toshiba | 10,024 | MOSFET 170W 1MHz Automotive; AEC-Q101 |
STW28N65M2 | STMicroelectronics | 1,200 | MOSFET PTD HIGH VOLTAGE |
DMP1046UFDB-13 | Diodes Incorporated | 78,930 | MOSFET 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC |
DMN3032LFDBQ-13 | Diodes Incorporated | 40,000 | MOSFET Dual N-Ch Enh FET 30V 20Vgss 1.0W |
DMTH6016LFVWQ-7 | Diodes Incorporated | 6,000 | MOSFET MOSFET BVDSS: 41V-60V |
TPCC8105,L1Q | Toshiba | 10,980 | MOSFET PWR MOS PD=30W F=1MHZ |
DMPH6050SSD-13 | Diodes Incorporated | 18,222 | MOSFET MOSFET BVDSS: 41V-60V |
SIZ250DT-T1-GE3 | Vishay Semiconductors | 5,918 | MOSFET DUAL N-CHANNEL 60-V PowerPAIR 3 x 3S |
IPD038N06N3 G | Infineon Technologies | 5,000 | MOSFET N-Ch 60V 90A DPAK-2 OptiMOS 3 |
IPD90N04S4-02 | Infineon Technologies | 2,500 | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 |