Produktübersicht
- Artikelnummer
- SJT00RT1004PNW52
- Hersteller
- Amphenol Pcd
- Produktkategorie
- Rundsteckverbinder nach MIL-Spezifikation
- Beschreibung
- Circular MIL Spec Connector SJT00RT-10-04PN(W52)
Dokumente & Medien
- Datenblätter
- SJT00RT1004PNW52
Produkteigenschaften
- Contact Gender :
- Pin (Male)
- Insert Arrangement :
- 10-04
- MIL Type :
- MIL-DTL-38999
- Number of Positions :
- 4 Position
- Product :
- Receptacles
- Series :
- SJT
- Shell Size :
- 10
- Shell Style :
- Wall Mount
- Termination Style :
- Crimp
Beschreibung
Circular MIL Spec Connector SJT00RT-10-04PN(W52)
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
Teil | Hersteller | Lager | Beschreibung |
---|---|---|---|
NTMTS0D6N04CTXG | onsemi | 2,216 | MOSFET T6 40V SG PQFN8*8 EXPANSION |
IPB60R125CFD7ATMA1 | Infineon Technologies | 1,377 | MOSFET HIGH POWER_NEW |
IAUS165N08S5N029ATMA1 | Infineon Technologies | 1,611 | MOSFET MOSFET_(75V 120V( |
FDPF4D5N10C | onsemi | 923 | MOSFET FET 100V 128A 4.5 mOhm |
STP45N60DM6 | STMicroelectronics | 973 | MOSFET PTD HIGH VOLTAGE |
STWA48N60DM2 | STMicroelectronics | 634 | MOSFET PTD HIGH VOLTAGE |
EFC4K105NUZTDG | onsemi | 4,889 | MOSFET Dual NCH 22V 25A |
SIZF914DT-T1-GE3 | Vishay / Siliconix | 5,567 | MOSFET 25V Vds 20V Vgs PowerPAIR 6 x 5F |
IPA60R125CFD7XKSA1 | Infineon Technologies | 708 | MOSFET HIGH POWER_NEW |
IPZA60R024P7XKSA1 | Infineon Technologies | 236 | MOSFET HIGH POWER_NEW |
IXFH32N100X | IXYS | 145 | MOSFET 1000V 32A TO-247 Power MOSFET |
IXTF1R4N450 | IXYS | 73 | MOSFET MSFT N-CH STD-VERY HI-VOLTAGE |
EFC4C012NLTDG | onsemi | 5,148 | MOSFET NCH 30V 30A WLCSP6 DUAL N-CHAN |
SIJ188DP-T1-GE3 | Vishay Semiconductors | 2,476 | MOSFET 60V Vds; 20V Vgs PowerPAK SO-8L |
SH8MB5TB1 | ROHM Semiconductor | 2,500 | MOSFET 40V DUAL MOSFET |