sales@szcinty.com
Produktübersicht
- Artikelnummer
- HTST-108-03-L-D
- Hersteller
- Samtec
- Produktkategorie
- Stiftleisten und Kabelgehäuse
- Beschreibung
- Headers & Wire Housings .100 High-Temp Shrouded Terminal Strip, Cable Mate
Dokumente & Medien
- Datenblätter
- HTST-108-03-L-D
Produkteigenschaften
- Contact Gender :
- Pin (Male)
- Minimum Operating Temperature :
- - 55 C
- Number of Rows :
- 2 Row
- Packaging :
- Bulk
- Pitch :
- 2.54 mm
- Product :
- Headers
- Row Spacing :
- 2.54 mm
- Series :
- HTST
- Tradename :
- Flex Stack
- Type :
- Shrouded
Beschreibung
Headers & Wire Housings .100 High-Temp Shrouded Terminal Strip, Cable Mate
Preis & Beschaffung
Zugehöriges Produkt
Das könnte Sie auch interessieren
| Teil | Hersteller | Lager | Beschreibung |
|---|---|---|---|
| E3M0075120D | Wolfspeed / Cree | 450 | MOSFET 1.2kV 75mOHMS E3M AUTO AECQ101 |
| STWA88N65M5 | STMicroelectronics | 1,096 | MOSFET N-Ch 650 V 0.024 Ohm 84 A MDmesh(TM) |
| APT29F100B2 | Microsemi / Microchip | 126 | MOSFET FG, FREDFET, 1000V, TO-247 T-MAX, RoHS |
| IXFX44N80P | IXYS | 498 | MOSFET 44 Amps 800V |
| IXTT2N300P3HV | IXYS | 150 | MOSFET MSFT N-CH STD-POLAR3 |
| DMN5L06VAK-7 | Diodes Incorporated | 52,382 | MOSFET 20V 280mA |
| BUK9K134-100EX | Nexperia | 6,000 | MOSFET 100V N-CHANNEL LOGIC LEVEL DUA |
| SPD04P10PGBTMA1 | Infineon Technologies | 5,000 | MOSFET P-Ch -100V -4A DPAK-2 |
| SISH617DN-T1-GE3 | Vishay Semiconductors | 8,988 | MOSFET -30V Vds 25V Vgs PowerPAK 1212-8 |
| BSC0925ND | Infineon Technologies | 5,000 | MOSFET N-Ch 30V 40A TISON-8 |
| SQJ992EP-T1_GE3 | Vishay / Siliconix | 2,838 | MOSFET Dual N-Channel 60V AEC-Q101 Qualified |
| SIS184DN-T1-GE3 | Vishay / Siliconix | 9,000 | MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 |
| NVMFS4C01NT1G | onsemi | 4,500 | MOSFET NFET SO8FL 30V 305A 0.9MO |
| SQJQ900E-T1_GE3 | Vishay / Siliconix | 2,000 | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified |
| IPB240N04S41R0ATMA1 | Infineon Technologies | 960 | MOSFET MOSFET_(20V 40V) |
