Produktübersicht

Artikelnummer
1N8172USe3
Hersteller
Microchip Technology
Produktkategorie
ESD-Unterdrücker / TVS-Dioden
Beschreibung
ESD Suppressors / TVS Diodes Hi Rel TVS

Dokumente & Medien

Datenblätter
1N8172USe3

Produkteigenschaften

Breakdown Voltage :
71.3 V
Cd - Diode Capacitance :
4 pF
Clamping Voltage :
103 V
Ipp - Peak Pulse Current :
1.45 A
Maximum Operating Temperature :
+ 175 C
Minimum Operating Temperature :
- 55 C
Number of Channels :
1 Channel
Package / Case :
SQ-MELF-2
Polarity :
Unidirectional
Pppm - Peak Pulse Power Dissipation :
150 W
Product Type :
TVS Diodes
Termination Style :
SMD/SMT
Vesd - Voltage ESD Air Gap :
-
Vesd - Voltage ESD Contact :
-
Working Voltage :
64 V

Beschreibung

ESD Suppressors / TVS Diodes Hi Rel TVS

Preis & Beschaffung

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